SKM100GAR17E4 ? by semikron rev. 2.0 C 24.06.2015 1 semitrans ? 2 gar igbt4 modules SKM100GAR17E4 features igbt4 = 4. generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode insulated copper baseplate using dbc technology (direct copper bonding) with integrated gate resistor for switching frequenzies up to 8khz ul recognized, file no. e63532 typical applications* electronic welders dc/dc C converter brake chopper switched reluctance motor remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1700 v i c t j = 175 c t c =25c 164 a t c =80c 127 a i cnom 100 a i crm i crm = 3xi cnom 300 a v ges -20 ... 20 v t psc v cc = 1000 v v ge 15 v v ces 1700 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 113 a t c =80c 83 a i fnom 100 a i frm i frm = 2xi fnom 200 a i fsm t p = 10 ms, sin 180, t j =25c 650 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t c =25c 113 a t c =80c 83 a i fnom 100 a i frm i frm = 2xi fnom 200 a i fsm t p = 10 ms, sin 180, t j =25c 650 a t j -40 ... 175 c module i t(rms) 200 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =100a v ge =15v chiplevel t j =25c 1.90 2.20 v t j =150c 2.30 2.60 v v ce0 chiplevel t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v chiplevel t j =25c 11 13 m t j =150c 16 18 m v ge(th) v ge =v ce , i c = 4 ma 5.2 5.8 6.4 v i ces v ge =0v v ce = 1700 v t j =25c 1m a t j =150c ma c ies v ce =25v v ge =0v f=1mhz 9n f c oes f=1mhz 0.34 nf c res f=1mhz 0.29 nf q g v ge = - 8 v...+ 15 v 800 nc r gint t j =25c 7.5
SKM100GAR17E4 2 rev. 2.0 C 24.06.2015 ? by semikron t d(on) v cc = 1200 v i c =100a v ge = +15/-15 v r g on =2 r g off =2 di/dt on = 2540 a/s di/dt off =610a/s du/dt = 5430 v/s t j =150c 234 ns t r t j =150c 39 ns e on t j =150c 43 mj t d(off) t j =150c 657 ns t f t j =150c 136 ns e off t j =150c 39 mj r th(j-c) per igbt 0.234 k/w inverse diode v f = v ec i f = 100 a v ge =0v chiplevel t j =25c 2.00 2.40 v t j =150c 2.15 2.57 v v f0 chiplevel t j =25c 1.32 1.56 v t j =150c 1.08 1.22 v r f chiplevel t j =25c 6.8 8.4 m t j =150c 11 14 m i rrm i f = 100 a di/dt off =2360a/s v ge =-15v v cc = 1200 v t j =150c 86 a q rr t j =150c 34 c e rr t j =150c 26 mj r th(j-c) per diode 0.504 k/w freewheeling diode v f = v ec i f = 100 a v ge =0v chiplevel t j =25c 2.00 2.40 v t j =150c 2.15 2.57 v v f0 chiplevel t j =25c 1.32 1.56 v t j =150c 1.08 1.22 v r f chiplevel t j =25c 6.8 8.4 m t j =150c 10.7 13.5 m i rrm i f = 100 a di/dt off =2360a/s v ge =15v v cc = 1200 v t j =150c 86 a q rr t j =150c 34 c e rr t j =150c 26 mj r th(j-c) per diode 0.504 k/w module l ce 30 nh r cc'+ee' terminal-chip t c =25c 0.65 m t c =125c 1.09 m r th(c-s) per module 0.04 0.05 k/w m s to heat sink m6 3 5 nm m t to terminals m5 2.5 5 nm nm w 160 g characteristics symbol conditions min. typ. max. unit semitrans ? 2 gar igbt4 modules SKM100GAR17E4 features igbt4 = 4. generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode insulated copper baseplate using dbc technology (direct copper bonding) with integrated gate resistor for switching frequenzies up to 8khz ul recognized, file no. e63532 typical applications* electronic welders dc/dc C converter brake chopper switched reluctance motor remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c
SKM100GAR17E4 ? by semikron rev. 2.0 C 24.06.2015 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM100GAR17E4 4 rev. 2.0 C 24.06.2015 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM100GAR17E4 ? by semikron rev. 2.0 C 24.06.2015 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 2 gar
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